Interaction-induced huge magnetoresistance in a high mobility two-dimensional electron gas

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848399· OSTI ID:22261825

Bockhorn, L.; Haug, R. J. ^[1]; Gornyi, I. V. ^[2]; Schuh, D. ^[3]; Wegscheider, W. ^[4]

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1. Institut für Festkörperphysik, Leibniz Universität Hannover, D-30167 Hannover (Germany)
2. Institut für Nanotechnologie, Karlsruher Institut of Technology, D-76021 Karlsruhe (Germany)
3. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93053 Regensburg (Germany)
4. ETH Zürich (Switzerland)

A strong negative magnetoresistance is observed in a high-mobility two-dimensional electron gas in a GaAs/Al{sub 0.3}Ga{sub 0.7}As quantum well. We discuss that the negative magnetoresistance consists of a small peak induced by a combination of two types of disorder and a huge magnetoresistance explained by the interaction correction to the conductivity for mixed disorder.

• OSTI ID: 22261825
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON GAS
GALLIUM ARSENIDES
INTERACTIONS
MAGNETORESISTANCE
QUANTUM WELLS