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Title: Magnetic thaw-down and boil-off due to magneto acceptors in 2DEG

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4848393· OSTI ID:22261819
;  [1];  [2];  [3];  [4];  [5]
  1. L2C UMR 5221, CNRS-Université Montpellier 2, Place E. Bataillon, 34090 Montpellier cedex 05 (France)
  2. LNCMI, UPR 3228, CNRS-INSA-UJF-UPS, BP166, 38042 Grenoble, Cedex 9 (France)
  3. LPN, CNRS, route de Nozay, 91460 Marcoussis (France)
  4. Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw (Poland)
  5. Institute of Physics, Polish Academy of Sciences, 02668 Warsaw (Poland)

The Quantum Hall Effect (QHE) and Shubnikov-de Haas effect are investigated experimentally using n type modulation-doped GaAs/GaAlAs quantum wells (QWs) additionally doped in the well with beryllium acceptor atoms. It is presently shown that the localized magneto-acceptor (MA) states which possess discrete energies above the corresponding Landau levels (LLs) lead to two observable effects in magneto-transport: magnetic thaw-down and magnetic boil-off of 2D electrons. Both effects are related to the fact that electrons occupying the localized MA states cannot conduct. Thus in the thaw-down effect the electrons fall down from the MA states to the free Landau states. This leads to a shift of the Hall plateau towards higher magnetic fields as a consequence of an increase of the 2D electron density N{sub S}. In the boil-off effect the electrons are pushed from the free Landau states to the empty MA states under high enough Hall electric field. This process has an avalanche character leading to a dramatic increase of magneto-resistance, consequence of a decrease of N{sub S}.

OSTI ID:
22261819
Journal Information:
AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English