Evidence of impurity assisted tunneling in SiGe/Si heterostructures
- Institute for Physics of Microstructures RAS, 603950, Nizhny Novgorod, GSP-105 (Russian Federation)
- Nizhny Novgorod State University, 603950, Nizhny Novgorod, Gagarina avenue, 23 (Russian Federation)
The investigation of vertical transport in delta-doped SiGe/Si heterostructures has been presented. The asymmetrical triple barrier structure was grown by MBE technique. The delta layer of boron impurity was placed into the center of narrower quantum well. The growth procedure was followed by conventional processing including photolithography and plasma etching and magnetron sputtering. SIMS and X-rays diagnostics have been used to control the desired structure. The conductance of the structure has been measured at liquid helium temperature and analyzed. All pronounced resonances have been identified. The resonant feature near 60 mV has to be attributed to impurity-assisted tunneling that is supported by calculation of binding energy of the acceptor in the narrower quantum well.
- OSTI ID:
- 22261782
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
Electronic Transport Properties of Epitaxial Si/SiGe Heterostructures Grown on Single-Crystal SiGe Nanomembranes