Depletion of parallel conducting layers in high mobility In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation doped field effect transistors
Journal Article
·
· AIP Conference Proceedings
- School of Engineering, University of Glasgow, Glasgow G12 8QQ (United Kingdom)
- School of Physics and Astronomy, Kelvin Building, University of Glasgow, Glasgow G12 8QQ (United Kingdom)
Self-consistent calculations for solving the Poisson and Schrödinger equations were performed in order to study parallel conduction in the In{sub 0.52}Al{sub 0.48}As barrier layer in In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As Modulation Doped Field Effect Transistors. It is shown that the parallel conducting layer occupied sub-bands can be entirely depleted by wet chemical etching of the upper part of the un-doped In{sub 0.52}Al{sub 0.48}As Schottky layer without affecting the total carrier concentration at the In{sub 0.53}Ga{sub 0.47}As quantum well.
- OSTI ID:
- 22261781
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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