Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells
Journal Article
·
· AIP Conference Proceedings
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China)
- Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. China and Nanostructure Institute for Energy and Environmental Research, Division of Physical Sciences, South University of Science and Technology of China, Shenzhen (China)
- Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, P. R. (China)
We performed a systematic study of the effect of electron collecting metal oxide layer on the performance of P3HT: PCBM solar cells. Zinc oxide (ZnO) or titanium dioxide (TiO{sub 2}) buffer layers were prepared by either e-beam evaporation or solution processing method. We also compared the photovoltaic performance of inserting the buffer layer between indium tin oxide (ITO) and the polymer layer for the inverted structure (ITO/ ZnO or TiO{sub 2}/P3HT:PCBM/V{sub 2}O{sub 5}/Au) as well as inserting the buffers layers between the polymer and the aluminum electrode for the conventional structure (ITO/V{sub 2}O{sub 5}/P3HT:PCBM/ZnO or TiO{sub 2}/Al). The results are shown in detail.
- OSTI ID:
- 22261774
- Journal Information:
- AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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