Fundamental optical properties of InN grown by epitaxial lateral overgrowth method

Journal Article · Wed Dec 04 00:00:00 EST 2013 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4848308· OSTI ID:22261750

Kametani, Tatsuma; Kamimura, Jumpei; Inose, Yuta; Kunugita, Hideyuki; Kikuchi, Akihiko; Kishino, Katsumi; Ema, Kazuhiro ^[1]

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1. Department of Engineering and Applied Science, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)

Optical properties of InN grown by the epitaxial lateral overgrowth (ELO) method have been studied using photoluminescence (PL) and excitation-correlation (EC) measurements. The PL spectrum is analyzed by free-electron recombination band (FERB) model, which shows that the ELO sample has a very low background carrier concentration (n=5.5*10{sup 16}[cm{sup −3]}). EC measurements show that the dependences of the band gap renormalization and Auger effect on the carrier concentrations are similar in spite of the different physical origins.

• OSTI ID: 22261750
• Journal Information: AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
AUGER EFFECT
EPITAXY
INDIUM NITRIDES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
RENORMALIZATION
SPECTRA