Plasmons in inhomogeneously doped neutral and charged graphene nanodisks
- ICFO-Institut de Ciencies Fotoniques, Mediterranean Technology Park, 08860 Castelldefels (Barcelona) (Spain)
We study plasmons in graphene nanodisks including the effect of inhomogeneity in the distribution of the doping charge. Specifically, we discuss the following two configurations: charged disks containing a fixed amount of additional carriers, which are self-consistently distributed along the surface to produce a uniform DC potential; and neutral disks exposed to a neighboring external point charge. A suitable finite-element method is elaborated to compute the charge density associated with the plasmons in the electrostatic limit. For charged disks, we find dipolar plasmons similar to those of uniformly doped graphene structures, in which the plasmon induced charge piles up near the edges. In contrast, in neutral disks placed near an external point charge, plasmons are strongly localized away from the edges. Surprisingly, a single external electron is enough to trap plasmons. The disks also display axially symmetric dark-plasmons, which can be excited through external illumination by coupling them to a neighboring metallic element. Our results have practical relevance for graphene nanophotonics under inhomogeneous doping conditions.
- OSTI ID:
- 22261635
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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