Electronic states, pseudo-spin, and transport in the zinc-blende quantum wells and wires with vanishing band gap
- Code 5613, Naval Research Laboratory, Washington, DC 20375 (United States)
We consider theoretically the electronic structure of quasi-two and quasi-one-dimensional heterostructures comprised of III–V and II–VI semiconductors such as InAs/GaInSb and HgCdTe. We show that not only a Dirac-like dispersion exists in these materials when the energy gap approaches zero but also the states with opposite momentum are orthogonal (i.e., can be described by a pseudo-spin), which suppresses backscattering and thereby enhances the electron mobility, by analogy with the case of graphene. However, unlike in graphene, a quasi-one-dimensional quantum wire with zero gap can be realized, which should eliminate most of the scattering processes and lead to long coherence lengths required for both conventional and ballistic electronic devices.
- OSTI ID:
- 22261630
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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