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Title: Asymmetric electroresistance of cluster glass state in manganites

Abstract

We report the electrostatic modulation of transport in strained Pr{sub 0.65}(Ca{sub 0.75}Sr{sub 0.25}){sub 0.35}MnO{sub 3} thin films grown on SrTiO{sub 3} by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.

Authors:
;  [1]; ; ;  [2]
  1. Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371 (Singapore)
  2. Materials Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22261611
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC FIELDS; ELECTRON CORRELATION; GLASS; MODULATION; SPIN; STRAINS; STRONTIUM TITANATES; THIN FILMS; TRANSISTORS

Citation Formats

Lourembam, James, Lin, Weinan, Ding, Junfeng, Bera, Ashok, and Wu, Tom. Asymmetric electroresistance of cluster glass state in manganites. United States: N. p., 2014. Web. doi:10.1063/1.4870480.
Lourembam, James, Lin, Weinan, Ding, Junfeng, Bera, Ashok, & Wu, Tom. Asymmetric electroresistance of cluster glass state in manganites. United States. https://doi.org/10.1063/1.4870480
Lourembam, James, Lin, Weinan, Ding, Junfeng, Bera, Ashok, and Wu, Tom. 2014. "Asymmetric electroresistance of cluster glass state in manganites". United States. https://doi.org/10.1063/1.4870480.
@article{osti_22261611,
title = {Asymmetric electroresistance of cluster glass state in manganites},
author = {Lourembam, James and Lin, Weinan and Ding, Junfeng and Bera, Ashok and Wu, Tom},
abstractNote = {We report the electrostatic modulation of transport in strained Pr{sub 0.65}(Ca{sub 0.75}Sr{sub 0.25}){sub 0.35}MnO{sub 3} thin films grown on SrTiO{sub 3} by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.},
doi = {10.1063/1.4870480},
url = {https://www.osti.gov/biblio/22261611}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 104,
place = {United States},
year = {Mon Mar 31 00:00:00 EDT 2014},
month = {Mon Mar 31 00:00:00 EDT 2014}
}