Optimal growth and thermal stability of crystalline Be{sub 0.25}Zn{sub 0.75}O alloy films on Al{sub 2}O{sub 3}(0001)
- School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756 (Korea, Republic of)
- Department of Materials Science and Engineering, Kyungpook National University, Sangju 742-711 (Korea, Republic of)
- Pohang Accelerator Laboratory, POSTECH, Pohang 790-784 (Korea, Republic of)
The influence of growth temperature on the synthesis of Be{sub x}Zn{sub 1−x}O alloy films, grown on highly-mismatched Al{sub 2}O{sub 3}(0001) substrates, was studied by synchrotron x-ray scattering, high-resolution transmission electron microscopy and photoluminescence measurements. A single-phase Be{sub x}Zn{sub 1−x}O alloy with a Be concentration of x = 0.25, was obtained at the growth temperature, T{sub g} = 400 °C, and verified by high-resolution transmission electron microscopy. It was found that high-temperature growth, T{sub g}≥600 °C, caused phase separation, resulting in a random distribution of intermixed alloy phases. The inhomogeneity and structural fluctuations observed in the Be{sub x}Zn{sub 1−x}O films grown at high temperatures are attributed to a variation in Be composition and mosaic distribution via atomic displacement and strain relaxation.
- OSTI ID:
- 22261589
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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