Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112{sup ¯}2) semipolar versus (0001) polar planes
- LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)
- Department of Electrical and Electronics, Department of Physics, and UNAM–Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)
- Electrical and Computer Engineering and Materials Department, University of California, Santa Barbara, California 93106 (United States)
The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112{sup ¯}2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.
- OSTI ID:
- 22261570
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical absorption of polar and semipolar InGaN/GaN quantum wells for blue to green converter structures
Temporally and spatially resolved photoluminescence investigation of (112{sup ¯}2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates