Self-annihilation of inversion domains by high energy defects in III-Nitrides

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871302· OSTI ID:22261547

Koukoula, T.; Kehagias, Th.; Komninou, Ph. ^[1]; Ajagunna, A. O.; Georgakilas, A. ^[2]

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1. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)
2. Microelectronics Research Group, IESL, FORTH, P.O. Box 1385, GR-71110 Heraklion, Crete, Greece and Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001{sup ¯}) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN.

• OSTI ID: 22261547
• Journal Information: Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ANNIHILATION
ELECTRON MICROSCOPY
GALLIUM NITRIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY