Luminescence based series resistance mapping of III-V multijunction solar cells

Journal Article · Thu Nov 21 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4831749· OSTI ID:22258753

Nesswetter, Helmut; Dyck, Wilhelm ^[1]; Lugli, Paolo ^[2]; Bett, Andreas W. ^[3]; Zimmermann, Claus G. ^[1]

---

1. Solar Array Center, EADS Astrium, 81663 Munich (Germany)
2. Institute for Nanoelectronics, Technical University of Munich, Arcisstr. 21, 80333 Munich (Germany)
3. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)

A method to measure the series resistance of Ga{sub 0.5}In{sub 0.5}P/Ga(In)As/Ge triple-junction solar cells spatially resolved is developed, based on luminescence imaging. With the help of network simulations, the dependence of the local series resistance on the external subcell illumination intensities and biasing voltage is predicted and the optimum measurement conditions are clarified. Experimentally, specially prepared test cells with partially irradiated areas are used to verify the capabilities of the method. It is shown that the method is not sensitive to variations of the dark I–V parameters of the subcells.

• OSTI ID: 22258753
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
14 SOLAR ENERGY
CONNECTORS
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ILLUMINANCE
IRRADIATION
LUMINESCENCE
SOLAR CELLS