Reduction of defect formation in amorphous indium-gallium-zinc-oxide thin film transistors by N{sub 2}O plasma treatment
- Department of Physics and Institute of Electro-Optical Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
- Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan (China)
- Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Rd., Hsinchu 31040, Taiwan (China)
An abnormal sub-threshold leakage current is observed at high temperature in amorphous indium-gallium-zinc-oxide thin film transistors (a-IGZO TFTs). This phenomenon occurs due to a reduced number of defects in the device's a-IGZO active layer after the device has undergone N{sub 2}O plasma treatment. Experimental verification shows that the N{sub 2}O plasma treatment enhances the thin film bonding strength, thereby suppressing the formation of temperature-dependent holes, which are generated above 400 K by oxygen atoms leaving their original sites. The N{sub 2}O plasma treatment devices have better stability performance than as-fabricated devices. The results suggest that the density of defects for a-IGZO TFTs with N{sub 2}O plasma treatment is much lower than that in as-fabricated devices. The N{sub 2}O plasma treatment repairs the defects and suppresses temperature-dependent sub-threshold leakage current.
- OSTI ID:
- 22258739
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors
Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer