Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques
- Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich (Germany)
- Radiophysics Faculty, Shevchenko National University, Kiev (Ukraine)
- Institute of Physics, NASU, Kiev (Ukraine)
High-quality Si nanowire field effect transistors (FETs) were fabricated using thermal nanoimprint and chemical wet etching technologies. FET structures of different lengths demonstrate high carrier mobility with values of about 750 cm{sup 2}/Vs and low volume densities of active traps in the dielectric layers of 5 × 10{sup 17} cm{sup −3} eV{sup −1}. We investigated the transport properties of these n-type channel structures using low-frequency noise spectroscopy before and after gamma radiation treatment. Before gamma irradiation, FET structures with lengths of less than 4 μm exhibited noise from contact regions with 1/(L{sup 2}) dependence for the relative 1/f noise. After gamma radiation, the spectra reflected the priority of channel noise with 1/L dependence for all samples. The transport characteristics show that the fabricated nanowire FETs improved scalability, decreased parameter scattering, and increased stability after treatment. The results demonstrate that these nanowire FETs are promising for nanoelectronic and biosensor applications due to the cost-efficient technology and advanced performance of FETs with improved stability and reliability.
- OSTI ID:
- 22258722
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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