Photoacoustic elastic bending in thin film—Substrate system
- Institute of Physics, University of Belgrade, Pregrevica 118, 11080 Belgrade-Zemun (Serbia)
Theoretical model for optically excited two-layer elastic plate, which includes plasmaelastic, thermoelastic, and thermodiffusion mechanisms, is given in order to study the dependence of the photoacoustic (PA) elastic bending signal on the optical, thermal, and elastic properties of thin film—substrate system. Thin film-semiconductor sample (in our case Silicon) is modeled by simultaneous analysis of the plasma, thermal, and elastic wave equations. Multireflection effects in thin film are included in theoretical model and analyzed. Relations for the amplitude and phase of electronic and thermal elastic bending in the optically excited two-layer mechanically-supported circular plate are derived. Theoretical analysis of the thermodiffusion, plasmaelastic, and thermoelastic effects in a sample-gas-microphone photoacoustic detection configuration is given. Two normalization procedures of the photoacoustic elastic bending signal in function of the modulation frequency of the optical excitation are established. Given theoretical model can be used for various photoacoustic detection configurations, for example, in the study of optical, thermal, and elastic properties of the dielectric-semiconductor or metal-semiconductor structure, etc., Theoretical analysis shows that it is possible to develop new noncontact and nondestructive experimental method—PA elastic bending method for thin film study, with possibility to obtain the optical, thermal, and elastic parameters of the film thinner than 1 μm.
- OSTI ID:
- 22258700
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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