Tin induced a-Si crystallization in thin films of Si-Sn alloys
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Ave., 03028 Kyiv (Ukraine)
- Faculty of Physics, Taras Shevchenko National University of Kyiv, 60 Volodymyrska St., 01601 Kyiv (Ukraine)
Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.
- OSTI ID:
- 22258686
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Initial reactions in Ti{endash}Si bilayers: New indications from in situ measurements
Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo{endash}Si{endash}N/SiC thin films