Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O

Journal Article · Wed Jan 15 00:00:00 EST 2014 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4840835· OSTI ID:22258682

Allman, Derryl; Price, David; Hose, Sallie ^[1]; Saly, Mark ^[2]

---

1. ON Semiconductor, Technology Development, Gresham, Oregon 97030 (United States)
2. SAFC Hitech, Haverhill, Massachusetts 01832 (United States)

Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90 and 270 °C on Si{sub 3}N{sub 4}, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi{sub 2}O{sub 3} films deposited at 150 °C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm{sup 3}, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210 °C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

• OSTI ID: 22258682
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH OXIDES
CARBON
CRYSTALS
DENSITY
DEPOSITION
DEPOSITS
ELLIPSOMETRY
REFLECTIVITY
ROUGHNESS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON NITRIDES
SUBSTRATES
TANTALUM NITRIDES
THIN FILMS
TITANIUM NITRIDES
TRANSMISSION ELECTRON MICROSCOPY
WATER
X RADIATION
X-RAY DIFFRACTION