Atomic layer deposition of molybdenum oxide using bis(tert-butylimido)bis(dimethylamido) molybdenum
- Ultratech/Cambridge NanoTech, 130 Turner Street, Waltham, Massachusetts 02453 (United States)
- SAFC Hitech, 1429 Hilldale Avenue, Haverhill, Massachusetts 01832 (United States)
Molybdenum trioxide films have been deposited using thermal atomic layer deposition techniques with bis(tert-butylimido)bis(dimethylamido)molybdenum. Films were deposited at temperatures from 100 to 300 °C using ozone as the oxidant for the process. The Mo precursor was evaluated for thermal stability and volatility using thermogravimetric analysis and static vapor pressure measurements. Film properties were evaluated with ellipsometry, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and secondary electron microscopy. The growth rate per cycle was determined to extend from 0.3 to 2.4 Å/cycle with <4% nonuniformity (1-sigma) with-in-wafer across a 150 mm wafer for the investigated temperature range.
- OSTI ID:
- 22258678
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
DEPOSITS
ELECTRON MICROSCOPY
ELLIPSOMETRY
FILMS
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MOLYBDENUM
MOLYBDENUM OXIDES
OXIDIZERS
OZONE
PRECURSOR
TEMPERATURE RANGE 0273-0400 K
THERMAL GRAVIMETRIC ANALYSIS
VAPOR PRESSURE
X-RAY PHOTOELECTRON SPECTROSCOPY