Controllable nitrogen doping in as deposited TiO{sub 2} film and its effect on post deposition annealing
- Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Gent (Belgium)
- Department of Bio-Engineering Sciences, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium and Center for Surface Chemistry and Catalysis, KU Leuven, Kasteelpark Arenberg 23, B-3001 Heverlee (Belgium)
- Department of Bio-Engineering Sciences, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium)
- Center for Surface Chemistry and Catalysis, KU Leuven, Kasteelpark Arenberg 23, B-3001 Heverlee (Belgium)
- SCK-CEN, Boeretang 200, B-2400 Mol (Belgium)
In order to narrow the band gap of TiO{sub 2}, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO{sub 2} and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO{sub 2} and PEALD TiN, the as synthesized TiO{sub x}N{sub y} films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO{sub 2} films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO{sub 2} along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.
- OSTI ID:
- 22258669
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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