Oxygen plasma immersion ion implantation treatment to enhance data retention of tungsten nanocrystal nonvolatile memory
- Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan (China)
- Department of Material Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taishan 24301, New Taipei City, Taiwan (China)
- Institute of Nuclear Energy Research, Atomic Energy Council, Longtan 325, Taoyuan, Taiwan (China)
Data retention characteristics of tungsten nanocrystal (W-NC) memory devices using an oxygen plasma immersion ion implantation (PIII) treatment are investigated. With an increase of oxygen PIII bias voltage and treatment time, the capacitance–voltage hysteresis memory window is increased but the data retention characteristics become degraded. High-resolution transmission electron microscopy images show that this poor data retention is a result of plasma damage on the tunneling oxide layer, which can be prevented by lowering the bias voltage to 7 kV. In addition, by using the elevated temperature retention measurement technique, the effective charge trapping level of the WO{sub 3} film surrounding the W-NCs can be extracted. This measurement reveals that a higher oxygen PIII bias voltage and treatment time induces more shallow traps within the WO{sub 3} film, degrading the retention behavior of the W-NC memory.
- OSTI ID:
- 22258657
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DAMAGE
EFFECTIVE CHARGE
ELECTRIC POTENTIAL
FILMS
HYSTERESIS
IMAGES
ION IMPLANTATION
LAYERS
MEMORY DEVICES
NANOSTRUCTURES
OXYGEN
PLASMA
RESOLUTION
RETENTION
TRANSMISSION ELECTRON MICROSCOPY
TUNGSTATES
TUNGSTEN
TUNGSTEN OXIDES
TUNNEL EFFECT