Phase formation and morphological stability of ultrathin Ni-Co-Pt silicide films formed on Si(100)
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433 (China)
- Solid-State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, 75121 Uppsala (Sweden)
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China and Solid-State Electronics, The Ångström Laboratory, Uppsala University, P.O. Box 534, 75121 Uppsala (Sweden)
Ultrathin Ni, Co, and Pt films, each no more than 4 nm in thickness, as well as their various combinations are employed to investigate the competing growth of epitaxial Co{sub 1-y}Ni{sub y}Si{sub 2} films against polycrystalline Pt{sub 1-z}Ni{sub z}Si. The phase formation critically affects the morphological stability of the resulting silicide films, with the epitaxial films being superior to the polycrystalline ones. Any combination of those metals improves the morphological stability with reference to their parent individual metal silicide films. When Ni, Co, and Pt are all included, the precise initial location of Pt does little to affect the final phase formation in the silicide films and the epitaxial growth of Co{sub 1-x}Ni{sub x}Si{sub 2} films is always perturbed, in accordance to thermodynamics that shows a preferential formation of Pt{sub 1-z}Ni{sub z}Si over that of Co{sub 1-y}Ni{sub y}Si{sub 2}.
- OSTI ID:
- 22258630
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 3; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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