Fracture and buckling of piezoelectric nanowires subject to an electric field
- College of Engineering, Swansea University, Singleton Park, Swansea, Wales SA2 8PP (United Kingdom)
Fracture and buckling are major failure modes of thin and long nanowires (NWs), which could be affected significantly by an electric field when piezoelectricity is involved in the NWs. This paper aims to examine the issue based on the molecular dynamics simulations, where the gallium nitride (GaN) NWs are taken as an example. The results show that the influence of the electric field is strong for the fracture and the critical buckling strains, detectable for the fracture strength but almost negligible for the critical buckling stress. In addition, the reversed effects are achieved for the fracture and the critical buckling strains. Subsequently, the Timoshenko beam model is utilized to account for the effect of the electric field on the axial buckling of the GaN NWs, where nonlocal effect is observed and characterized by the nonlocal coefficient e{sub 0}a=1.1 nm. The results show that the fracture and buckling of piezoelectric NWs can be controlled by applying an electric field.
- OSTI ID:
- 22257802
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Contributed Review: Experimental characterization of inverse piezoelectric strain in GaN HEMTs via micro-Raman spectroscopy
Molecular dynamics simulation on the buckling behavior of GaN nanowires under uniaxial compression