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Title: Correlation between structural and opto-electronic characteristics of crystalline Si microhole arrays for photonic light management

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4829008· OSTI ID:22257796
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  1. Helmholtz-Zentrum Berlin für Materialien und Energie, Institute Silicon Photovoltaics, Kekuléstr. 5, Berlin 12489 (Germany)
  2. SCHOTT AG, Hattenbergstraße 10, Mainz 55122 (Germany)
  3. Helmholtz-Zentrum Berlin für Materialien und Energie, Institute for Nanometre Optics and Technology, Albert-Einstein-Str. 15, Berlin 12489 (Germany)
  4. Konrad-Zuse-Zentrum für Informationstechnik Berlin, Takustraße 7, Berlin 14195 (Germany)

By employing electron paramagnetic resonance spectroscopy, transmission electron microscopy, and optical measurements, we systematically correlate the structural and optical properties with the deep-level defect characteristics of various tailored periodic Si microhole arrays, which are manufactured in an easily scalable and versatile process on nanoimprinted sol-gel coated glass. While tapered microhole arrays in a structured base layer are characterized by partly nanocrystalline features, poor electronic quality with a defect concentration of 10{sup 17} cm{sup −3} and a high optical sub-band gap absorption, planar polycrystalline Si layers perforated with periodic arrays of tapered microholes are composed of a compact crystalline structure and a defect concentration in the low 10{sup 16} cm{sup −3} regime. The low defect concentration is equivalent to the one in planar state-of-the-art solid phase crystallized Si films and correlates with a low optical sub-band gap absorption. By complementing the experimental characterization with 3-dimensional finite element simulations, we provide the basis for a computer-aided approach for the low-cost fabrication of novel high-quality structures on large areas featuring tailored opto-electronic properties.

OSTI ID:
22257796
Journal Information:
Journal of Applied Physics, Vol. 114, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English