Transport mechanisms and effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunction solar cells

Journal Article · Thu Nov 14 00:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4831661· OSTI ID:22257777

Hamelmann, Frank ^[1]

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1. Department of Technology, University of Applied Sciences Bielefeld Campus, Minden, D-32427 Minden (Germany)

The impact of boron doping on the p-layer of thin film silicon solar cells is assessed by measuring the effective Schottky barrier height of ZnO/a-Si:H and ZnO/μc-Si:H heterojunctions. A deviation from ideal diode characteristics is revealed by an increase of ideality factor with doping concentration. Higher current densities and lower effective Schottky barriers are evaluated for higher doping levels, resulting in increasingly Ohmic behaviour. This is attributed to an enhancement of tunneling through a thinner depletion region, as supported by computer simulations. Extracted barriers are in the range of 0.7–1 eV for the heterojunctions with rectifying behaviour.

• OSTI ID: 22257777
• Journal Information: Journal of Applied Physics, Vol. 114, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON
COMPUTERIZED SIMULATION
CONCENTRATION RATIO
CURRENT DENSITY
HETEROJUNCTIONS
SILICON SOLAR CELLS
THIN FILMS
ZINC OXIDES