Topography, complex refractive index, and conductivity of graphene layers measured by correlation of optical interference contrast, atomic force, and back scattered electron microscopy
Journal Article
·
· Journal of Applied Physics
- Training Application Support Center, Carl Zeiss Microscopy GmbH, Königsallee 9-21, 37081 Göttingen (Germany)
- Department of Physics, Columbia University New York, 538 West 120th Street, New York, New York 10027 (United States)
- DME Nanotechnologie GmbH, Geysostr. 13, D-38106 Braunschweig (Germany)
The optical phase shift by reflection on graphene is measured by interference contrast microscopy. The height profile across graphene layers on 300 nm thick SiO{sub 2} on silicon is derived from the phase profile. The complex refractive index and conductivity of graphene layers on silicon with 2 nm thin SiO{sub 2} are evaluated from a phase profile, while the height profile of the layers is measured by atomic force microscopy. It is observed that the conductivity measured on thin SiO{sub 2} is significantly greater than on thick SiO{sub 2}. Back scattered electron contrast of graphene layers is correlated to the height of graphene layers.
- OSTI ID:
- 22257764
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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