Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Journal Article · Mon Mar 10 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868131· OSTI ID:22257746

Nogues, Gilles; Den Hertog, Martien ^[1]; Auzelle, Thomas; Gayral, Bruno; Daudin, Bruno ^[2]

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1. Inst. NEEL, Univ. Grenoble Alpes, F-38042 Grenoble (France)
2. INAC, CEA, F-38054 Grenoble (France)

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.

• OSTI ID: 22257746
• Journal Information: Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CATHODOLUMINESCENCE
DIFFUSION LENGTH
EXCITONS
GALLIUM NITRIDES
PHOTOLUMINESCENCE
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
STACKING FAULTS
TRANSMISSION ELECTRON MICROSCOPY
WIRES