Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample
- Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and Ecole Normale Supérieure de Cachan, 91405 Orsay (France)
- Laboratoire des Sciences des Procédés et des Matériaux, CNRS and Université Paris 13, 93340 Villetaneuse (France)
We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a ∼97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications.
- OSTI ID:
- 22257723
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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