Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction

Journal Article · Mon Mar 17 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4869030· OSTI ID:22257722

Jin, Xiuguang ^[1]; Nakahara, Hirotaka ^[2]; Saitoh, Koh; Tanaka, Nobuo ^[3]; Takeda, Yoshikazu ^[4]

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1. Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
2. Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
3. EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)
4. Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan)

Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10 nm thickness, deposited on a 100 nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

• OSTI ID: 22257722
• Journal Information: Applied Physics Letters, Vol. 104, Issue 11; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALS
ELECTRON DIFFRACTION
GALLIUM ARSENIDES
PERIODICITY
STRAINS
SUPERLATTICES