Epitaxial Si encapsulation of highly misfitting SiC quantum dot arrays formed on Si (001)

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4859695· OSTI ID:22257216

Petz, C. W.; Floro, J. A. ^[1]; Yang, D.; Levy, J. ^[2]; Myers, A. F. ^[3]

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1. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
2. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15213 (United States)
3. Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

This work examines Si overgrowth to encapsulate 3C-SiC quantum dot arrays epitaxially grown on Si substrates. Using transmission electron microscopy, we show how the crystalline quality of the Si cap depends on the growth conditions. Overgrowth at 300 °C leads to a planar, epitaxial Si cap, but with small crystallographic rotations in the cap above each quantum dot. At 400 °C growth temperature, Si exhibits reduced sticking to the SiC, leading to a non-planar cap. However, a two-step process, with thin layer grown at 250 °C followed by growth at 500 °C, leads to a planar cap with a much-reduced density of defects.

• OSTI ID: 22257216
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTALLOGRAPHY
DEFECTS
EPITAXY
QUANTUM DOTS
SILICON CARBIDES
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY