The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861120· OSTI ID:22257157

Zhang, Hongtao; Desai, P.; Kreouzis, T. ^[1]; Zhan, Y. Q. ^[1]; Drew, A. J. ^[1]; Gillin, W. P. ^[1]

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1. Materials Research Institute, School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) based spin valves, single Alq{sub 3} layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq{sub 3}, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq{sub 3} based spin valves with NiFe or Fe electrodes are holes.

• OSTI ID: 22257157
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
CHARGE CARRIERS
ELECTRON MOBILITY
HOLE MOBILITY
IRON
NICKEL
OXINE
SPIN
TIME-OF-FLIGHT METHOD