Quantum pumping of valley current in strain engineered graphene
- Department of Physics, University of Science and Technology of China, Hefei (China)
We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50 nA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices.
- OSTI ID:
- 22257148
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Pure spin current induced by adiabatic quantum pumping in zigzag-edged graphene nanoribbons
Electron and spin transport in adiabatic quantum pumps based on graphene nanoribbons
Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels, and Confined States
Journal Article
·
Mon May 05 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22257148
Electron and spin transport in adiabatic quantum pumps based on graphene nanoribbons
Journal Article
·
Sat Oct 15 00:00:00 EDT 2011
· Journal of Experimental and Theoretical Physics
·
OSTI ID:22257148
Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels, and Confined States
Journal Article
·
Tue Mar 10 00:00:00 EDT 2020
· Physical Review Letters
·
OSTI ID:22257148
+1 more