p-type GaN grown by phase shift epitaxy

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861058· OSTI ID:22257144

Zhong, M.; Roberts, J. ^[1]; Kong, W.; Brown, A. S. ^[2]

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1. Nitronex Corporation, Raleigh, North Carolina 27606 (United States)
2. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)

Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by periodic shutter action (in order to iterate between Ga- and N-rich surface conditions) and by adjusting time delays between dopant and Ga shutters. Optimum PSE growth was obtained by turning on the Mg flux in the N-rich condition. This suppresses Mg self-compensation at high Mg concentration and produces fairly high hole concentrations (2.4 × 10{sup 18} cm{sup −3})

• OSTI ID: 22257144
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
GALLIUM NITRIDES
HOLES
MOLECULAR BEAM EPITAXY
PHASE SHIFT