Spin-Hall-assisted magnetic random access memory

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4858465· OSTI ID:22257135

Brink, A. van den,; Swagten, H. J. M.; Koopmans, B. ^[1]; Cosemans, S.; Manfrini, M.; Van Roy, W.; Min, T. ^[2]; Cornelissen, S.; Vaysset, A. ^[2]

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1. Physics of Nanostructures, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
2. imec, Kapeldreef 75, B-3001 Leuven (Belgium)

We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1 ns write time.

• OSTI ID: 22257135
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
HALL EFFECT
MAGNETORESISTANCE
SPIN
TUNNEL EFFECT