Bias-dependent interface roughening and its effect on electric bistability of organic devices

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4861622· OSTI ID:22257118

Zeng, Q.; Ye, F. F.; Li, W. B.; Chen, X. Q.; Yu, H. M.; Yang, X. J.; You, Y. T. ^[1]

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1. State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433 (China)

Atomic force microscopy (AFM), field-emission scanning electron microscopy, and energy dispersive X-Ray spectroscopy are used to study morphological and compositional variations of metal-organic interfaces in organic bistable devices. The results show that bias voltage causes rougher interfaces with new protrusions, and the switching phenomena origins from the evolution of these protrusions under external electric field. In order to exclude other possible factors, three types of bistable devices are designed and examined. In addition, metal-coated AFM probes are utilized to simulate the switching process, which yields similar results and corroborates our conclusion.

• OSTI ID: 22257118
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
ELECTRIC FIELDS
EQUIPMENT
FIELD EMISSION
ORGANOMETALLIC COMPOUNDS
SCANNING ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY