Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4858958· OSTI ID:22257113

MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Aagesen, M.; Lindelof, P. E. ^[1]

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1. Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

• OSTI ID: 22257113
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ELECTRONS
GALLIUM ARSENIDES
RADIOWAVE RADIATION
THERMAL CYCLING
TRANSISTORS