Investigation of thermal resistance and power consumption in Ga-doped indium oxide (In{sub 2}O{sub 3}) nanowire phase change random access memory
- Division of IT Convergence Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
- Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
The resistance stability and thermal resistance of phase change memory devices using ∼40 nm diameter Ga-doped In{sub 2}O{sub 3} nanowires (Ga:In{sub 2}O{sub 3} NW) with different Ga-doping concentrations have been investigated. The estimated resistance stability (R(t)/R{sub 0} ratio) improves with higher Ga concentration and is dependent on annealing temperature. The extracted thermal resistance (R{sub th}) increases with higher Ga-concentration and thus the power consumption can be reduced by ∼90% for the 11.5% Ga:In{sub 2}O{sub 3} NW, compared to the 2.1% Ga:In{sub 2}O{sub 3} NW. The excellent characteristics of Ga-doped In{sub 2}O{sub 3} nanowire devices offer an avenue to develop low power and reliable phase change random access memory applications.
- OSTI ID:
- 22257041
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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