Single-photon emission from cubic GaN quantum dots

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4858966· OSTI ID:22257011

Kako, Satoshi ^[1]; Holmes, Mark; Sergent, Sylvain ^[2]; Bürger, Matthias; As, Donat J. ^[3]; Arakawa, Yasuhiko ^[1]

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1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
2. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
3. Universität Paderborn, Department Physik, Warburger Str. 100, 33095 Paderborn (Germany)

We report the demonstration of single-photon emission from cubic GaN/AlN quantum dots grown by molecular beam epitaxy. We have observed spectrally clean and isolated emission peaks from these quantum dots. Clear single-photon emission was detected by analyzing one such peak at 4 K. The estimated g{sup (2)}[0] value is 0.25, which becomes 0.05 when corrected for background and detector dark counts. We have also observed the single-photon nature of the emission up to 100 K (g{sup (2)}[0] = 0.47). These results indicate that cubic GaN quantum dots are possible candidates for high-temperature operating UV single-photon sources with the possibility of integration into photonic nanostructures.

• OSTI ID: 22257011
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM NITRIDES
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
PHOTON EMISSION
PHOTONS
QUANTUM DOTS
TEMPERATURE RANGE 0065-0273 K