Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

Journal Article · Mon Dec 09 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4847355· OSTI ID:22255285

Yoshimura, Masatoshi; Nakai, Eiji; Fukui, Takashi ^[1]; Tomioka, Katsuhiro ^[1]

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1. Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan)

Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5 G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.

• OSTI ID: 22255285
• Journal Information: Applied Physics Letters, Vol. 103, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ELECTRIC POTENTIAL
ELECTRICAL FAULTS
FILL FACTORS
HETEROJUNCTIONS
INDIUM PHOSPHIDES
PHOTOVOLTAIC EFFECT
QUANTUM EFFICIENCY
SOLAR CELLS
TIN OXIDES