Growth and properties of crystalline barium oxide on the GaAs(100) substrate

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4828794· OSTI ID:22254137

Yasir, M.; Dahl, J.; Lång, J.; Tuominen, M.; Punkkinen, M. P. J.; Kokko, K. ^[1]; Kuzmin, M. ^[1]; Korpijärvi, V. -M.; Polojärvi, V.; Guina, M. ^[2]

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1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)
2. Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)

Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.

• OSTI ID: 22254137
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
BARIUM OXIDES
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS