Free electron gas primary thermometer: The bipolar junction transistor
- Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Dpto. de Ing. Eléctrica-SEES, Av. Instituto Politécnico Nacional No 2508, México D.F. CP 07360 (Mexico)
The temperature of a bipolar transistor is extracted probing its carrier energy distribution through its collector current, obtained under appropriate polarization conditions, following a rigorous mathematical method. The obtained temperature is independent of the transistor physical properties as current gain, structure (Homo-junction or hetero-junction), and geometrical parameters, resulting to be a primary thermometer. This proposition has been tested using off the shelf silicon transistors at thermal equilibrium with water at its triple point, the transistor temperature values obtained involve an uncertainty of a few milli-Kelvin. This proposition has been successfully tested in the temperature range of 77–450 K.
- OSTI ID:
- 22254129
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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