Observation of rebirth of metallic paths during resistance switching of metal nanowire

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829469· OSTI ID:22254127

Nagamura, N.; Toyoda, S.; Oshima, M. ^[1]; Fujiwara, K.; Takagi, H. ^[2]; Kumigashira, H. ^[3]

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1. Department of Applied Chemistry, The University of Tokyo, Tokyo 113-8656 (Japan)
2. RIKEN Advanced Science Institute, Saitama 351-0198 (Japan)
3. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Ibaraki 305-0801 (Japan)

To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (E{sub F}) in a high-resistance state and recovery of a finite DOS at E{sub F} in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.

• OSTI ID: 22254127
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRONIC STRUCTURE
FERMI LEVEL
METALS
NANOSTRUCTURES