In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829356· OSTI ID:22254120

Sarath Kumar, S. R.; Nayak, Pradipta K.; Hedhili, M. N.; Khan, M. A.

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.

• OSTI ID: 22254120
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ELECTRON MICROSCOPY
ENERGY BEAM DEPOSITION
GRAPHENE
HONEYCOMB STRUCTURES
LASER RADIATION
P-N JUNCTIONS
PULSED IRRADIATION
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY