Single photon emission from site-controlled InGaN/GaN quantum dots

Journal Article · Mon Nov 04 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4830000· OSTI ID:22254105

Zhang, Lei; Hill, Tyler A.; Deng, Hui ^[1]; Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng ^[2]

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1. Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)
2. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.

• OSTI ID: 22254105
• Journal Information: Applied Physics Letters, Vol. 103, Issue 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACCURACY
CORRELATION FUNCTIONS
FABRICATION
GALLIUM NITRIDES
LIFETIME
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHOTONS
QUANTUM DOTS
TEMPERATURE RANGE 0013-0065 K