Long-wavelength emission in photo-pumped GaAs{sub 1−x}Bi{sub x} laser with low temperature dependence of lasing wavelength

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4830273· OSTI ID:22254077

Fuyuki, Takuma; Yoshioka, Ryo; Yoshida, Kenji; Yoshimoto, Masahiro ^[1]

---

1. Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585 (Japan)

This study demonstrates long-wavelength emission of up to 1204 nm in photo-pumped GaAs{sub 1−x}Bi{sub x} lasers grown by molecular beam epitaxy under low temperature conditions. The characteristic temperature (T{sub 0}) between 20 and 80 °C in the GaAs{sub 1−x}Bi{sub x} lasers with Al{sub 0.3}Ga{sub 0.7}As electron blocking layer is approximately 100 K, which is larger than that of the typical 1.3-μm InGaAsP Fabry-Perot laser diodes (FP-LDs; T{sub 0} = 66 K). The temperature coefficient of the lasing wavelength is approximately 40% of that of InGaAsP FP-LDs.

• OSTI ID: 22254077
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
APPROXIMATIONS
DEPLETION LAYER
GALLIUM ARSENIDES
LANTHANUM SELENIDES
LASERS
MOLECULAR BEAM EPITAXY
TEMPERATURE COEFFICIENT
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS