Modulation of conductance and superconductivity by top-gating in LaAlO{sub 3}/SrTiO{sub 3} 2-dimensional electron systems

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829555· OSTI ID:22254073

Eerkes, P. D.; Wiel, W. G. van der; Hilgenkamp, H. ^[1]

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1. MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO{sub 3}/SrTiO{sub 3} interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO{sub 3} films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO{sub 3} substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super-)conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO{sub 3}/SrTiO{sub 3} interfaces when no gate voltage is applied.

• OSTI ID: 22254073
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
DIELECTRIC MATERIALS
ELECTRODES
ELECTRON BEAMS
ELECTRON GAS
ELECTRONS
ENERGY BEAM DEPOSITION
EPITAXY
FILMS
LANTHANUM COMPOUNDS
LASER RADIATION
PULSED IRRADIATION
STRONTIUM TITANATES
SUBSTRATES
SUPERCONDUCTIVITY