Fluorescence quenching of CdSe quantum dots on graphene

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4831670· OSTI ID:22254054

Guo, Xi Tao; Yan Nan, Hai; Hui Wang, Wen ^[1]; Yan Liao, Chun ^[2]; Zhang, Yan; Wei Zhao, Wei ^[3]

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1. Department of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189 (China)
2. Physics Department, National Photoelectric Technology and Functional Materials and Application of Science and Technology International Cooperation Base, Northwest University, Xi'an 710069 (China)
3. Jiangsu Key Laboratory for Design and Fabrication of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing 211189 (China)

We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (∼13.1) and its multilayers is much larger than rGO (∼4.4), while GO (∼1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

• OSTI ID: 22254054
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CADMIUM SELENIDES
FLUORESCENCE
GRAPHENE
GRAPHITE
LAYERS
QUANTUM DOTS
QUENCHING
THICKNESS