Photoluminescence properties of Mg-doped InN nanowires

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4831895· OSTI ID:22254045

Zhao, Songrui; Liu, Xuedong; Mi, Zetian ^[1]

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1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9 (Canada)

In this work, photoluminescence (PL) properties of nearly defect-free Mg-doped InN nanowires were investigated in detail. The low-doped sample exhibits two PL emission peaks up to 152 K, which can be ascribed to the band-to-band recombination and the Mg-acceptor energy level related recombination, respectively. For the high-doped sample, the Mg-acceptor energy level related transition dominates. Detailed power dependent PL studies further indicate that the Mg-acceptor energy level related PL emission is due to the donor-acceptor pair recombination process, which subsequently evolves into the free-to-acceptor recombination with increasing temperature.

• OSTI ID: 22254045
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DOPED MATERIALS
ENERGY LEVELS
INDIUM NITRIDES
PHOTOLUMINESCENCE
QUANTUM WIRES
RECOMBINATION