Ferroelectric Pb(Zr,Ti)O{sub 3} epitaxial layers on GaAs

Journal Article · Mon Nov 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4831738· OSTI ID:22254033

Louahadj, L. ^[1]; Le Bourdais, D.; Agnus, G.; Pillard, V.; Lecoeur, P. ^[2]; Largeau, L. ^[3]; Mazet, L.; Bachelet, R.; Regreny, P.; Dubourdieu, C.; Gautier, B.; Albertini, D. ^[4]

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1. RIBER SA, 31 rue Casimir Périer, 95870 Bezons (France)
2. Université Paris-Sud, Institut d'Electronique Fondamentale, Bât. 220, 91405 Orsay Cedex (France)
3. LPN-UPR20-CNRS, route de Nozay, 91460 Marcoussis (France)
4. Université de Lyon, INSA de Lyon, INL-UMR5270-CNRS, 20, avenue Albert Einstein, 69621 Villeurbanne (France)

Ferroelectric epitaxial Pb(Zr,Ti)O{sub 3} (PZT) layers were grown by pulsed laser deposition on SrTiO{sub 3}/GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO{sub 3}/GaAs is abrupt at the atomic scale. The PZT layers contain a- and c-domains, as shown by X-Ray diffraction analyses. Piezoforce microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.

• OSTI ID: 22254033
• Journal Information: Applied Physics Letters, Vol. 103, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ENERGY BEAM DEPOSITION
FERROELECTRIC MATERIALS
GALLIUM ARSENIDES
LASER RADIATION
MICROSCOPY
MOLECULAR BEAM EPITAXY
OZONE
PULSED IRRADIATION
PZT
STRONTIUM TITANATES
X-RAY DIFFRACTION