Lateral spin valves with two-different Heusler-alloy electrodes on the same platform

Journal Article · Mon Nov 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4832480· OSTI ID:22254031

Oki, S.; Yamada, S.; Tanikawa, K.; Yamasaki, K.; Miyao, M.

Using room-temperature molecular beam epitaxy on Si(111), we demonstrate Heusler-alloy bilayers consisting of L2{sub 1}-Co{sub 2}FeSi (CFS) and D0{sub 3}-Fe{sub 3}Si (FS). By fabricating lateral spin valves with L2{sub 1}-CFS and D0{sub 3}-FS electrodes, we can see ideal spin signals even though we use one L2{sub 1}-CFS as a spin injector and another D0{sub 3}-FS as a spin detector. The difference in the spin absorption between L2{sub 1}-CFS and D0{sub 3}-FS can also be examined, and we find that the spin resistance of D0{sub 3}-FS is larger than that of L2{sub 1}-CFS. This work will be useful for understanding spin transport in lateral spin-valve devices with different Heusler-alloy electrodes.

• OSTI ID: 22254031
• Journal Information: Applied Physics Letters, Vol. 103, Issue 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ELECTRODES
HEUSLER ALLOYS
IRON SILICIDES
LAYERS
MOLECULAR BEAM EPITAXY
SIGNALS
SPIN
TEMPERATURE RANGE 0273-0400 K